au.\*:("HOYT, J. L")
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Photonic Analog-to-Digital Conversion with Electronic-Photonic Integrated CircuitsKÄRTNER, F. X; AMATYA, R; HOYT, J. L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689806.1-68980615, issn 0277-786X, isbn 978-0-8194-7073-7, 1VolConference Paper
Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-x/n-Si heterojunction bipolar transistorsGHANI, T; HOYT, J. L; MCCARTHY, A. M et al.Journal of electronic materials. 1995, Vol 24, Num 8, pp 999-1002, issn 0361-5235Article
Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si1-xGex epitaxial layersKAMINS, T. I; NAUKA, K; JACOWITZ, R. D et al.IEEE electron device letters. 1992, Vol 13, Num 4, pp 177-179, issn 0741-3106Article
Conservation of bond lengths in strained Ge-Si layersWOICIK, J. C; BOULDIN, C. E; PIANETTA, P et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 3, pp 2419-2422, issn 0163-1829Article
Integrated optical components in silicon for high speed analog-to-digital conversionSPECTOR, S. J; LYSZCZARZ, T. M; BYUN, H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 64770O.1-64770O.14, issn 0277-786X, isbn 978-0-8194-6590-0, 1VolConference Paper
On the mechanism of ion-implanted As diffusion in relaxed SiGeEGUCHI, S; LEE, J. J; RHEE, S. J et al.Applied surface science. 2004, Vol 224, Num 1-4, pp 59-62, issn 0169-4332, 4 p.Conference Paper
Fabrication of ultra-thin strained silicon on insulatorDRAKE, T. S; CHLEIRIGH, C. Ni; HOYT, J. L et al.Journal of electronic materials. 2003, Vol 32, Num 9, pp 972-975, issn 0361-5235, 4 p.Article
Electron mobility enhancement in strained-Si N-type metal-oxide-semiconductor field-effect transistorsWELSER, J; HOYT, J. L; GIBBONS, J. F et al.IEEE electron device letters. 1994, Vol 15, Num 3, pp 100-102, issn 0741-3106Article
Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layersKUO, P; HOYT, J. L; GIBBONS, J. F et al.Applied physics letters. 1993, Vol 62, Num 6, pp 612-614, issn 0003-6951Article
Abrupt phosphorus profiles in Si: Effects of temperature and substitutional carbon on phosphorus autodopingSINGH, D. V; HOYT, J. L; GIBBONS, J. F et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 9, pp G553-G556, issn 0013-4651Article
Comparison of Si/Si1-x-yGexCy and Si/Si1-yCy heterojunctions grown by rapid thermal chemical vapor depositionHOYT, J. L; MITCHELL, T. O; RIM, K et al.Thin solid films. 1998, Vol 321, Num 1-2, pp 41-46, issn 0040-6090Conference Paper
Polycrystalline carbon : a novel material for gate electrodes in MOS technologyRAGHAVAN, G; HOYT, J. L; GIBBONS, J. F et al.Japanese journal of applied physics. 1993, Vol 32, Num 1B, pp 380-383, issn 0021-4922, 1Conference Paper
Small-geometry, high-performance, Si-Si1-xGex heterojonction bipolar transistorsKAMINS, T. I; NAUKA, K; KRUGER, J. B et al.IEEE electron device letters. 1989, Vol 10, Num 11, pp 503-505, issn 0741-3106Article
Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back techniqueABERG, I; OLUBUYIDE, O. O; NI CHLEIRIGH, C et al.Symposium on VLSI Technology. sd, pp 52-53, isbn 0-7803-8289-7, 1Vol, 2 p.Conference Paper
Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nmGOMEZ, Leonardo; ABERG, I; HOYT, J. L et al.IEEE electron device letters. 2007, Vol 28, Num 4, pp 285-287, issn 0741-3106, 3 p.Article
Fabrication of strained Si/Strained SiGe/Strained si heterostructures on insulator by a bond and etch-back techniqueABERG, I; OLUBUVIDE, O. O; LI, J et al.IEEE international SOI conference. 2004, pp 35-36, isbn 0-7803-8497-0, 1Vol, 2 p.Conference Paper
Si/Si1-xGex heterojunction bipolar transistors produced by limited reaction processingKING, C. A; HOYT, J. L; GRONET, C. M et al.IEEE electron device letters. 1989, Vol 10, Num 2, pp 52-54, issn 0741-3106Article
Etching technique for characterization of epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> siliconHOYT, J. L; CRABBE, E. F; PEASE, R. F. W et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 7, pp 1839-1842, issn 0013-4651Article
Epitaxial alignment of arsenic implanted polycrystalline silicon films on <100> silicon obtained by rapid thermal annealingHOYT, J. L; CRABBE, E; GIBBONS, J. F et al.Applied physics letters. 1987, Vol 50, Num 12, pp 751-753, issn 0003-6951Article
